2SB942 transistor equivalent, silicon pnp power transistor.
*Designed for low-frequency power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
VALUE
UNIT
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*Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -4A
*Good Linearity of hFE
*Complement to Type 2SD1267
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for l.
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